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dc.contributor.authorHong, Jhen-Yong
dc.contributor.authorChen, Chun-Yen
dc.contributor.authorLing, Dah-Chin
dc.contributor.authorMartínez, Isidoro
dc.contributor.authorGonzález-Ruano, César
dc.contributor.authorAliev, Farkhad G.
dc.date.accessioned2021-11-04T11:37:40Z
dc.date.available2021-11-04T11:37:40Z
dc.date.issued2021
dc.identifier.issn2079-9292spa
dc.identifier.urihttp://hdl.handle.net/10641/2581
dc.description.abstractLow-frequency 1/f voltage noise has been employed to probe stochastic charge dynamics in AlOx-based non-volatile resistive memory devices exhibiting both resistive switching (RS) and magneto-resistive (MR) effects. A 1/f noise power spectral density is observed in a wide range of applied voltage biases. By analyzing the experimental data within the framework of Hooge’s empirical relation, we found that the Hooge’s parameter and the exponent exhibit a distinct variation upon the resistance transition from the low resistance state (LRS) to the high resistance state (HRS), providing strong evidence that the electron trapping/de-trapping process, along with the electric field-driven oxygen vacancy migration in the AlOx barrier, plays an essential role in the charge transport dynamics of AlOx-based RS memory devices.spa
dc.language.isoengspa
dc.publisherElectronicsspa
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.subjectlow-frequency 1/f noisespa
dc.subjectresistive switchingspa
dc.subjectmagnetic tunnel junction (MTJ)spa
dc.subjectmagnetoresistance (MR)spa
dc.subjectHooge’s parameterspa
dc.titleLow-Frequency 1/f Noise Characteristics of Ultra-Thin AlOx-Based Resistive Switching Memory Devices with Magneto-Resistive Responses.spa
dc.typearticlespa
dc.description.versionpost-printspa
dc.rights.accessRightsopenAccessspa
dc.description.extent973 KBspa
dc.identifier.doi10.3390/electronics10202525spa
dc.relation.publisherversionhttps://www.mdpi.com/2079-9292/10/20/2525spa


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Atribución-NoComercial-SinDerivadas 3.0 España
Except where otherwise noted, this item's license is described as Atribución-NoComercial-SinDerivadas 3.0 España