dc.contributor.author | Gao, Z. | |
dc.contributor.author | Romero Rojo, María Fátima | |
dc.contributor.author | Calle, F. | |
dc.date.accessioned | 2019-01-14T10:56:12Z | |
dc.date.available | 2019-01-14T10:56:12Z | |
dc.date.issued | 2018 | |
dc.identifier.issn | 0018-9383 | spa |
dc.identifier.uri | http://hdl.handle.net/10641/1545 | |
dc.description.abstract | AlGaN/GaN HEMTs and MOS-HEMTs using HfO2 as gate dielectric have been analyzed at room temperature, after STA and TC test, during off-state electrical step stress, HTRB and PBTI tests. Results showed that the leakage current in as-fabricated MOS-HEMTs decreased by 106 and the on/off ratio increased by over 104 than the HEMTs. Moreover, it was even higher after a STA test, up to 108, in the MOS-HEMTs, and the surface trapping effects were mitigated, especially if a KOH cleaning was used before HfO2 deposition. The MOS-HEMTs also showed higher electrical stability after off-state step electrical stress, HTRB and PBTI tests. | spa |
dc.language.iso | eng | spa |
dc.publisher | IEEE Transactions on Electron Devices | spa |
dc.rights | Atribución-NoComercial-SinDerivadas 3.0 España | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ | * |
dc.subject | Electrical stress | spa |
dc.subject | Highelectron mobility transistor | spa |
dc.subject | Metal–oxide– semiconductor | spa |
dc.title | Thermal and electrical stability assessment of AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors (MOS-HEMT) with HfO2 gate dielectric. | spa |
dc.type | journal article | spa |
dc.type.hasVersion | SMUR | spa |
dc.rights.accessRights | open access | spa |
dc.description.extent | 732 KB | spa |
dc.identifier.doi | 10.1109/TED.2018.2842205 | spa |