dc.contributor.author | Hong, Jhen-Yong | |
dc.contributor.author | Chen, Chun-Yen | |
dc.contributor.author | Ling, Dah-Chin | |
dc.contributor.author | Martínez, Isidoro | |
dc.contributor.author | González-Ruano, César | |
dc.contributor.author | Aliev, Farkhad G. | |
dc.date.accessioned | 2021-11-04T11:37:40Z | |
dc.date.available | 2021-11-04T11:37:40Z | |
dc.date.issued | 2021 | |
dc.identifier.issn | 2079-9292 | spa |
dc.identifier.uri | http://hdl.handle.net/10641/2581 | |
dc.description.abstract | Low-frequency 1/f voltage noise has been employed to probe stochastic charge dynamics
in AlOx-based non-volatile resistive memory devices exhibiting both resistive switching (RS) and
magneto-resistive (MR) effects. A 1/f
noise power spectral density is observed in a wide range
of applied voltage biases. By analyzing the experimental data within the framework of Hooge’s
empirical relation, we found that the Hooge’s parameter and the exponent
exhibit a distinct
variation upon the resistance transition from the low resistance state (LRS) to the high resistance
state (HRS), providing strong evidence that the electron trapping/de-trapping process, along with
the electric field-driven oxygen vacancy migration in the AlOx barrier, plays an essential role in the
charge transport dynamics of AlOx-based RS memory devices. | spa |
dc.language.iso | eng | spa |
dc.publisher | Electronics | spa |
dc.rights | Atribución-NoComercial-SinDerivadas 3.0 España | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ | * |
dc.subject | low-frequency 1/f noise | spa |
dc.subject | resistive switching | spa |
dc.subject | magnetic tunnel junction (MTJ) | spa |
dc.subject | magnetoresistance (MR) | spa |
dc.subject | Hooge’s parameter | spa |
dc.title | Low-Frequency 1/f Noise Characteristics of Ultra-Thin AlOx-Based Resistive Switching Memory Devices with Magneto-Resistive Responses. | spa |
dc.type | journal article | spa |
dc.type.hasVersion | AM | spa |
dc.rights.accessRights | open access | spa |
dc.description.extent | 973 KB | spa |
dc.identifier.doi | 10.3390/electronics10202525 | spa |
dc.relation.publisherversion | https://www.mdpi.com/2079-9292/10/20/2525 | spa |