Hong, Jhen-YongChen, Chun-YenLing, Dah-ChinMartínez, IsidoroGonzález-Ruano, CésarAliev, Farkhad G.2021-11-042021-11-0420212079-9292http://hdl.handle.net/10641/2581Low-frequency 1/f voltage noise has been employed to probe stochastic charge dynamics in AlOx-based non-volatile resistive memory devices exhibiting both resistive switching (RS) and magneto-resistive (MR) effects. A 1/f noise power spectral density is observed in a wide range of applied voltage biases. By analyzing the experimental data within the framework of Hooge’s empirical relation, we found that the Hooge’s parameter and the exponent exhibit a distinct variation upon the resistance transition from the low resistance state (LRS) to the high resistance state (HRS), providing strong evidence that the electron trapping/de-trapping process, along with the electric field-driven oxygen vacancy migration in the AlOx barrier, plays an essential role in the charge transport dynamics of AlOx-based RS memory devices.engAtribución-NoComercial-SinDerivadas 3.0 Españahttp://creativecommons.org/licenses/by-nc-nd/3.0/es/low-frequency 1/f noiseresistive switchingmagnetic tunnel junction (MTJ)magnetoresistance (MR)Hooge’s parameterjournal articleopen access10.3390/electronics10202525